(NEWS JOURNAL) – Today, IBM (NYSE: IBM) and Samsung Electronics jointly announced a breakthrough in semiconductor design utilizing a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet, and has the potential to reduce energy usage by 85 percent compared to a scaled fin field-effect transistor (finFET)1. The global semiconductor shortage has highlighted the critical role of investment in chip research and development and the importance of chips in everything from computing, to appliances, to communication devices, transportation systems, and critical infrastructure.
The two companies' semiconductor innovation was produced at the Albany Nanotech Complex in Albany, NY, where research scientists work in close collaboration with public and private sector partners to push the boundaries of logic scaling and semiconductor capabilities.
This collaborative approach to innovation makes the Albany Nanotech Complex a world-leading ecosystem for semiconductor research and creates a strong innovation pipeline, helping to address manufacturing demands and accelerate the growth of the global chip industry.
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